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Part Number TPN4R203NC,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 30V 23A 8TSON-ADV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Datasheets TPN4R203NC
Packaging Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 11.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
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Reference Price(In US Dollars)
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US$ 0.42

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  • Toshiba Semiconductor and Storage TPN4R203NC,L1Q
  • TPN4R203NC,L1Q data sheet
  • TPN4R203NC,L1Q datasheet
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  • Download TPN4R203NC,L1Q datasheet
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  • Toshiba TPN4R203NC,L1Q
  • Toshiba Semiconductor and Storage TPN4R203NC,L1Q